PART |
Description |
Maker |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
ATM2400C ATM2400C-J28 ATM2400C-J57 |
2.5Gb/s APD preamp Mini-DIL receiver
|
Bookham, Inc.
|
NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector. 30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC CEL[California Eastern Labs]
|
FRM5J141GW |
InGaAs-PIN/Preamp Receiver
|
Eudyna Devices Inc
|
FRM3Z121LT FRM3Z121KT |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应 NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应 NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc. California Eastern Labs
|
APD-1150 APD-1155 |
InGaAs Avalanche PHOTODIODE InGaAs APD with Mini-Size TO Package
|
Optoway Technology Inc
|
FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp InGaAs-PIN/Preamp前置放大
|
Sumitomo Electric Industries, Ltd.
|
C30659-900-1060-1550NM |
Silicon and InGaAs APD Preamplifier Modules
|
Perkin Elmer Optoelectronics
|
G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|